Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1597990

Title:	Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
Authors:	Liu, W. Chua, S.J. Zhang, X.H. Zhang, J.
Issue Date:	4-Aug-2003
Citation:	Liu, W., Chua, S.J., Zhang, X.H., Zhang, J. (2003-08-04). Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions. Applied Physics Letters 83 (5) : 914-916. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1597990
Abstract:	The effect of postgrowth high temperature treatment of InGaN/GaN multiple quantum wells (MQW) was studied. Photoluminescence (PL) measurements on these samples showed extra peaks in the spectrum beside the green emission due to reactor temperature ramping up to 1000°C after the MQWs growth. The PL spectra show that these extra emission peaks originate due to the occurrence of In segregation in the upper part of the quantum wells.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/55746
ISSN:	00036951
DOI:	10.1063/1.1597990
Appears in Collections:	Staff Publications

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