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|Title:||Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure|
|Keywords:||CMOS RF modeling|
RF MOSFET parameter extraction
|Citation:||Mahalingam, U., Rustagi, S.C., Samudra, G.S. (2006-02). Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure. IEEE Electron Device Letters 27 (2) : 130-132. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.863132|
|Abstract:||This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters. © 2006 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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