Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.863132
Title: Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure
Authors: Mahalingam, U.
Rustagi, S.C.
Samudra, G.S. 
Keywords: CMOS RF modeling
RF MOSFET parameter extraction
Substrate network
Substrate resistance
Issue Date: Feb-2006
Source: Mahalingam, U., Rustagi, S.C., Samudra, G.S. (2006-02). Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure. IEEE Electron Device Letters 27 (2) : 130-132. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.863132
Abstract: This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55647
ISSN: 07413106
DOI: 10.1109/LED.2005.863132
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