Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1362679
Title: Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals
Authors: Han, G.C. 
Luo, P.
Li, K.B.
Wu, Y.H. 
Issue Date: May-2001
Source: Han, G.C., Luo, P., Li, K.B., Wu, Y.H. (2001-05). Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 (3) : 793-797. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1362679
Abstract: Silicon nitride was grown by plasma enhanced chemical vapor deposition to find its application in magnetic random access memory. Auger electron spectroscopy measurements were used to study diffusion and oxidation of plasma enhanced chemical vapor deposition nitride and underlying metals. Diffusion of Si into Cu film was detected for high-temperature deposited layers.
Source Title: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/55637
ISSN: 07342101
DOI: 10.1116/1.1362679
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