Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.923710
Title: Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors
Authors: Tan, K.-M.
Fang, W.-W.
Yang, M.
Liow, T.-Y.
Lee, R.T.-P. 
Balasubramanian, N.
Yeo, Y.-C. 
Keywords: Contact etch stop layer (CESL)
Diamond-like carbon (DLC)
FinFET
Multiple-gate
Strain
Issue Date: Jul-2008
Source: Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C. (2008-07). Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors. IEEE Electron Device Letters 29 (7) : 750-752. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923710
Abstract: We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55632
ISSN: 07413106
DOI: 10.1109/LED.2008.923710
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