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|Title:||Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors|
|Keywords:||Contact etch stop layer (CESL)|
Diamond-like carbon (DLC)
|Citation:||Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C. (2008-07). Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors. IEEE Electron Device Letters 29 (7) : 750-752. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923710|
|Abstract:||We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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