Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2753827
Title: Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extraction
Authors: Wong, K.M. 
Chim, W.K. 
Issue Date: 2007
Source: Wong, K.M., Chim, W.K. (2007). Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extraction. Applied Physics Letters 91 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2753827
Abstract: An approach for fast and accurate carrier profiling using deep-depletion analytical modeling of scanning capacitance microscopy (SCM) measurements is shown for an ultrashallow p-n junction with a junction depth of less than 30 nm and a profile steepness of about 3 nm per decade change in carrier concentration. In addition, the analytical model is also used to extract the SCM dopant profiles of three other p-n junction samples with different junction depths and profile steepnesses. The deep-depletion effect arises from rapid changes in the bias applied between the sample and probe tip during SCM measurements. The extracted carrier profile from the model agrees reasonably well with the more accurate carrier profile from inverse modeling and the dopant profile from secondary ion mass spectroscopy measurements. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55510
ISSN: 00036951
DOI: 10.1063/1.2753827
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