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|Title:||Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact|
|Citation:||Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L. (2005). Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact. Journal of Applied Physics 97 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1923162|
|Abstract:||Current-voltage-temperature characterization has been performed on NiGen- (100) Ge Schottky contacts that were formed by the solid-state reaction of Ni with Ge. An effective barrier height of 0.732-0.735 eV, which is larger than the band-gap 0.66 eV of Ge, was obtained. A physical model describing the current transport mechanism in a Schottky contact with a barrier height larger than the semiconductor band gap is proposed and discussed on the basis of thermionic-field emission as the dominant transport mechanism. The observation of a barrier height larger than the semiconductor band gap should be of technological importance as it suggests that NiGe is an ideal contact and Schottky source/drain material in Ge-based p -metal-oxide-semiconductor field-effect-transistors. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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