Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1923162
Title: Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact
Authors: Chi, D.Z.
Lee, R.T.P.
Chua, S.J.
Lee, S.J. 
Ashok, S.
Kwong, D.-L.
Issue Date: 2005
Citation: Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L. (2005). Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact. Journal of Applied Physics 97 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1923162
Abstract: Current-voltage-temperature characterization has been performed on NiGen- (100) Ge Schottky contacts that were formed by the solid-state reaction of Ni with Ge. An effective barrier height of 0.732-0.735 eV, which is larger than the band-gap 0.66 eV of Ge, was obtained. A physical model describing the current transport mechanism in a Schottky contact with a barrier height larger than the semiconductor band gap is proposed and discussed on the basis of thermionic-field emission as the dominant transport mechanism. The observation of a barrier height larger than the semiconductor band gap should be of technological importance as it suggests that NiGe is an ideal contact and Schottky source/drain material in Ge-based p -metal-oxide-semiconductor field-effect-transistors. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55488
ISSN: 00218979
DOI: 10.1063/1.1923162
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