Please use this identifier to cite or link to this item:
|Title:||Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact|
|Source:||Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L. (2005). Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact. Journal of Applied Physics 97 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1923162|
|Abstract:||Current-voltage-temperature characterization has been performed on NiGen- (100) Ge Schottky contacts that were formed by the solid-state reaction of Ni with Ge. An effective barrier height of 0.732-0.735 eV, which is larger than the band-gap 0.66 eV of Ge, was obtained. A physical model describing the current transport mechanism in a Schottky contact with a barrier height larger than the semiconductor band gap is proposed and discussed on the basis of thermionic-field emission as the dominant transport mechanism. The observation of a barrier height larger than the semiconductor band gap should be of technological importance as it suggests that NiGe is an ideal contact and Schottky source/drain material in Ge-based p -metal-oxide-semiconductor field-effect-transistors. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 17, 2017
checked on Dec 17, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.