Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.48.021102
Title: Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate
Authors: Ning, J.
Xu, S.
Wang, R.
Zhang, F.
Le, H.
Chua, S. 
Issue Date: Feb-2009
Source: Ning, J., Xu, S., Wang, R., Zhang, F., Le, H., Chua, S. (2009-02). Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate. Japanese Journal of Applied Physics 48 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.021102
Abstract: Vertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55451
ISSN: 00214922
DOI: 10.1143/JJAP.48.021102
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