Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0169-4332(01)00391-9
Title: | Controlled synthesis of aligned carbon nanotube arrays on catalyst patterned silicon substrates by plasma-enhanced chemical vapor deposition | Authors: | Wang, H. Lin, J. Huan, C.H.A. Dong, P. He, J. Tang, S.H. Eng, W.K. Thong, T.L.J. |
Keywords: | Carbon nanotubes Lithography Pattern PE-CVD SEM |
Issue Date: | 21-Sep-2001 | Citation: | Wang, H., Lin, J., Huan, C.H.A., Dong, P., He, J., Tang, S.H., Eng, W.K., Thong, T.L.J. (2001-09-21). Controlled synthesis of aligned carbon nanotube arrays on catalyst patterned silicon substrates by plasma-enhanced chemical vapor deposition. Applied Surface Science 181 (3-4) : 248-254. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00391-9 | Abstract: | Aligned carbon nanotube (CNT) array has been successfully synthesized from acetylene and hydrogen mixture by radio frequency (rf) plasma-enhanced chemical vapor deposition (PE-CVD) on patterned iron or cobalt coated silicon substrates. The length of the nanotubes and thus the height of the CNT arrays could be controlled by varying the growth time; the width of the lines was controlled by the size of the openings in the shallow mask. Adjusting the thickness of the catalyst layer changes the aligned CNT density within the array. Using the substrates with a 10-30nm catalyst layer, the synthesized CNTs were densely packed and perpendicularly aligned. However, a thicker (more than 60nm) or a thinner (less than 5nm) catalyst layer resulted in a significantly reduced CNT density within the array. © 2001 Elsevier Science B.V. All rights reserved. | Source Title: | Applied Surface Science | URI: | http://scholarbank.nus.edu.sg/handle/10635/55424 | ISSN: | 01694332 | DOI: | 10.1016/S0169-4332(01)00391-9 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.