Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2716304
Title: Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowires
Authors: Whang, S.J. 
Lee, S.J. 
Yang, W.F.
Cho, B.J. 
Liew, Y.F. 
Kwong, D.L. 
Issue Date: 2007
Source: Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Liew, Y.F., Kwong, D.L. (2007). Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowires. Electrochemical and Solid-State Letters 10 (6) : 11-13. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2716304
Abstract: High-quality single-crystal Si nanowires with diameters ranging from 10 to 200 nm have been successfully grown using Al catalyst via a vapor-liquid-solid mechanism. Critical issues such as the effects of surface oxidation of the Al seeding layer on the growth of Si nanowires and selective removal of metal catalyst after nanowire growth have been systematically studied. Results show that the growth of Si nanowire is strongly dependent on the surface oxidation of Al seeding layers. It is also found that metal-contamination-free Si nanowires can be achieved by selective etching of the remaining Al particles from nanowires, providing a Si nanowire as a complementary metal-oxide-semiconductor compatible building block for future nanoelectronics applications. © 2007 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55365
ISSN: 10990062
DOI: 10.1149/1.2716304
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