Characterizing photolithographic linewidth sensitivity to process temperature variations for advanced resists using a thermal array

Abstract

A thermal system is developed to rapidly characterize the linewidth sensitivity of advanced resists to process temperature variations in the photolithographic manufacturing sequence. This thermal array consists of a 7 × 7 grid of individually programmable heating zones distributed within a thermal cycling apparatus. It is used to improve the quality and quantity of data for determining the optimal thermal conditions by effectively producing equivalent operating conditions besides the spatially controlled temperature. The system is demonstrated for the optimization of the post-apply and post-exposure thermal-processing conditions for chemically amplified photoresists used in the fabrication of quartz photomasks.