Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-007-3910-3
Title: Characterization of electronic materials and devices by scanning near-field microscopy
Authors: Balk, L.J.
Heiderhoff, R.
Phang, J.C.H. 
Thomas, Ch.
Issue Date: Jun-2007
Source: Balk, L.J., Heiderhoff, R., Phang, J.C.H., Thomas, Ch. (2007-06). Characterization of electronic materials and devices by scanning near-field microscopy. Applied Physics A: Materials Science and Processing 87 (3) : 443-449. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-007-3910-3
Abstract: Due to the reduction of structure sizes in modern electronic devices reliable characterization techniques are required in the nanometer range. Since the comparable wavelengths in investigation methods are larger, near-field techniques have to be used for nano-inspection allowing sub-wavelength resolution. Also many microscopy methods with static fields imply near-field approaches. Analyzing several near-field approaches for fields and waves, a general concept for near-field description will be introduced which can be applied to various near-field interaction mechanisms. Based on scanning probe microscopy, different techniques are shown to determine locally miscellaneous properties which are important for modern electronic materials and devices. © Springer-Verlag 2007.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/55273
ISSN: 09478396
DOI: 10.1007/s00339-007-3910-3
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