Please use this identifier to cite or link to this item:
https://doi.org/10.1007/s00339-007-3910-3
Title: | Characterization of electronic materials and devices by scanning near-field microscopy |
Authors: | Balk, L.J. Heiderhoff, R. Phang, J.C.H. Thomas, Ch. |
Issue Date: | Jun-2007 |
Citation: | Balk, L.J., Heiderhoff, R., Phang, J.C.H., Thomas, Ch. (2007-06). Characterization of electronic materials and devices by scanning near-field microscopy. Applied Physics A: Materials Science and Processing 87 (3) : 443-449. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-007-3910-3 |
Abstract: | Due to the reduction of structure sizes in modern electronic devices reliable characterization techniques are required in the nanometer range. Since the comparable wavelengths in investigation methods are larger, near-field techniques have to be used for nano-inspection allowing sub-wavelength resolution. Also many microscopy methods with static fields imply near-field approaches. Analyzing several near-field approaches for fields and waves, a general concept for near-field description will be introduced which can be applied to various near-field interaction mechanisms. Based on scanning probe microscopy, different techniques are shown to determine locally miscellaneous properties which are important for modern electronic materials and devices. © Springer-Verlag 2007. |
Source Title: | Applied Physics A: Materials Science and Processing |
URI: | http://scholarbank.nus.edu.sg/handle/10635/55273 |
ISSN: | 09478396 |
DOI: | 10.1007/s00339-007-3910-3 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
9
checked on Feb 13, 2019
WEB OF SCIENCETM
Citations
7
checked on Feb 4, 2019
Page view(s)
43
checked on Dec 22, 2018
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.