Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3562375
Title: C-doped ZnO nanowires: Electronic structures, magnetic properties, and a possible spintronic device
Authors: Dai, Z. 
Nurbawono, A.
Zhang, A. 
Zhou, M.
Feng, Y.P. 
Ho, G.W. 
Zhang, C. 
Issue Date: 14-Mar-2011
Source: Dai, Z., Nurbawono, A., Zhang, A., Zhou, M., Feng, Y.P., Ho, G.W., Zhang, C. (2011-03-14). C-doped ZnO nanowires: Electronic structures, magnetic properties, and a possible spintronic device. Journal of Chemical Physics 134 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3562375
Abstract: Electronic structures, magnetic properties, and spin-dependent electron transport characteristics of C-doped ZnO nanowires have been investigated via first-principles method based on density functional theory and nonequilibrium techniques of Greens functions. Our calculations show that the doping of carbon atoms in a ZnO nanowire could induce strong magnetic moments in the wire, and the electronic structures as well as the magnetic properties of the system sensitively depend on partial hydrogenation. Based on these findings, we proposed a quasi-1d tunneling magnetic junction made of a partially hydrogenated C-doped ZnO nanowire, which shows a high tunneling magnetoresistance ratio, and could be the building block of a new class of spintronic devices. © 2011 American Institute of Physics.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55259
ISSN: 00219606
DOI: 10.1063/1.3562375
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