Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4738787
Title: Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions
Authors: Sahadevan, A.M.
Tiwari, R.K.
Kalon, G. 
Bhatia, C.S. 
Saeys, M. 
Yang, H. 
Issue Date: 23-Jul-2012
Citation: Sahadevan, A.M., Tiwari, R.K., Kalon, G., Bhatia, C.S., Saeys, M., Yang, H. (2012-07-23). Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions. Applied Physics Letters 101 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4738787
Abstract: We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55201
ISSN: 00036951
DOI: 10.1063/1.4738787
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