Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2837189
Title: Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
Authors: Fang, L.W.-W.
Pan, J.-S.
Zhao, R.
Shi, L.
Chong, T.-C.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2008
Citation: Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C. (2008). Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters 92 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2837189
Abstract: Band alignment of amorphous Ge2 Sb2 Te5 and various substrates was obtained using high-resolution x-ray photoelectron spectroscopy. The valence band offset of Ge2 Sb2 Te5 on various complementary-metal-oxide-semiconductor (CMOS) materials, i.e., Si, Si O2, Hf O2, Si3 N4 and NiSi, were investigated with the aid of the core level, valence band, and energy loss spectra. Energy band lineups of Ge2 Sb2 Te5 on these materials were thus determined which can be used as for phase change memory device engineering and integration with CMOS technology. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55186
ISSN: 00036951
DOI: 10.1063/1.2837189
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