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https://doi.org/10.1109/TMTT.2008.2011210
| Title: | Analytical extraction of extrinsic and intrinsic FET parameters | Authors: | Ooi, B.L. Zhong, Z. Leong, M.-S. |
Keywords: | Field-effect transistor (FET) Small-signal equivalent circuit |
Issue Date: | Feb-2009 | Citation: | Ooi, B.L., Zhong, Z., Leong, M.-S. (2009-02). Analytical extraction of extrinsic and intrinsic FET parameters. IEEE Transactions on Microwave Theory and Techniques 57 (2) : 254-261. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2008.2011210 | Abstract: | The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional cold FET and hot FET modeling constraints and allows an ease in inline process tracking. © 2009 IEEE. | Source Title: | IEEE Transactions on Microwave Theory and Techniques | URI: | http://scholarbank.nus.edu.sg/handle/10635/55105 | ISSN: | 00189480 | DOI: | 10.1109/TMTT.2008.2011210 |
| Appears in Collections: | Staff Publications |
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