Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMTT.2008.2011210
Title: Analytical extraction of extrinsic and intrinsic FET parameters
Authors: Ooi, B.L. 
Zhong, Z. 
Leong, M.-S. 
Keywords: Field-effect transistor (FET)
Small-signal equivalent circuit
Issue Date: Feb-2009
Source: Ooi, B.L., Zhong, Z., Leong, M.-S. (2009-02). Analytical extraction of extrinsic and intrinsic FET parameters. IEEE Transactions on Microwave Theory and Techniques 57 (2) : 254-261. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2008.2011210
Abstract: The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional cold FET and hot FET modeling constraints and allows an ease in inline process tracking. © 2009 IEEE.
Source Title: IEEE Transactions on Microwave Theory and Techniques
URI: http://scholarbank.nus.edu.sg/handle/10635/55105
ISSN: 00189480
DOI: 10.1109/TMTT.2008.2011210
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