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|Title:||A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage|
Julius Tsai, M.
|Citation:||Qian, Y., Lou, L., Julius Tsai, M., Lee, C. (2012-03-12). A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage. Applied Physics Letters 100 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3693382|
|Abstract:||A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 μm by 4 μm supported by two silicon nanowires, suspended on top of the substrate with a gap of 145 nm. The nanowires are 5 μm long with cross-section of 90 nm by 90 nm. The average pull-in voltage is about 1.12 V and the ratio of the ON/OFF current is measured to be over 10 000. According to the preliminary results, this U-shape structure demonstrates great potential in lowering down the pull-in voltage. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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