Please use this identifier to cite or link to this item:
|Title:||A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage|
Julius Tsai, M.
|Source:||Qian, Y., Lou, L., Julius Tsai, M., Lee, C. (2012-03-12). A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage. Applied Physics Letters 100 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3693382|
|Abstract:||A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 μm by 4 μm supported by two silicon nanowires, suspended on top of the substrate with a gap of 145 nm. The nanowires are 5 μm long with cross-section of 90 nm by 90 nm. The average pull-in voltage is about 1.12 V and the ratio of the ON/OFF current is measured to be over 10 000. According to the preliminary results, this U-shape structure demonstrates great potential in lowering down the pull-in voltage. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 6, 2017
WEB OF SCIENCETM
checked on Nov 21, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.