Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3693382
Title: A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage
Authors: Qian, Y.
Lou, L.
Julius Tsai, M.
Lee, C. 
Issue Date: 12-Mar-2012
Source: Qian, Y., Lou, L., Julius Tsai, M., Lee, C. (2012-03-12). A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage. Applied Physics Letters 100 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3693382
Abstract: A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 μm by 4 μm supported by two silicon nanowires, suspended on top of the substrate with a gap of 145 nm. The nanowires are 5 μm long with cross-section of 90 nm by 90 nm. The average pull-in voltage is about 1.12 V and the ratio of the ON/OFF current is measured to be over 10 000. According to the preliminary results, this U-shape structure demonstrates great potential in lowering down the pull-in voltage. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/54101
ISSN: 00036951
DOI: 10.1063/1.3693382
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