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|Title:||A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force|
Jiaqiang Ng, E.
Julius Tsai, M.
|Citation:||Soon, B.W., Jiaqiang Ng, E., Qian, Y., Singh, N., Julius Tsai, M., Lee, C. (2013-07-29). A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force. Applied Physics Letters 103 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4817796|
|Abstract:||By using complementary-metal-oxide-semiconductor processes, a silicon based bi-stable nanoelectromechanical non-volatile memory is fabricated and characterized. The main feature of this device is an 80 nm wide and 3 μm high silicon nanofin (SiNF) of a high aspect ratio (1:35). The switching mechanism is realized by electrostatic actuation between two lateral electrodes, i.e., terminals. Bi-stable hysteresis behavior is demonstrated when the SiNF maintains its contact to one of the two terminals by leveraging on van der Waals force even after voltage bias is turned off. The compelling results indicate that this design is promising for realization of high density non-volatile memory application due to its nano-scale footprint and zero on-hold power consumption. © 2013 AIP Publishing LLC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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