Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4817796
Title: A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force
Authors: Soon, B.W.
Jiaqiang Ng, E.
Qian, Y.
Singh, N.
Julius Tsai, M.
Lee, C. 
Issue Date: 29-Jul-2013
Source: Soon, B.W., Jiaqiang Ng, E., Qian, Y., Singh, N., Julius Tsai, M., Lee, C. (2013-07-29). A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force. Applied Physics Letters 103 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4817796
Abstract: By using complementary-metal-oxide-semiconductor processes, a silicon based bi-stable nanoelectromechanical non-volatile memory is fabricated and characterized. The main feature of this device is an 80 nm wide and 3 μm high silicon nanofin (SiNF) of a high aspect ratio (1:35). The switching mechanism is realized by electrostatic actuation between two lateral electrodes, i.e., terminals. Bi-stable hysteresis behavior is demonstrated when the SiNF maintains its contact to one of the two terminals by leveraging on van der Waals force even after voltage bias is turned off. The compelling results indicate that this design is promising for realization of high density non-volatile memory application due to its nano-scale footprint and zero on-hold power consumption. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53908
ISSN: 00036951
DOI: 10.1063/1.4817796
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

6
checked on Nov 21, 2017

Page view(s)

35
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.