Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMTT.2012.2211611
Title: A 3-D table-based method for non-quasi-static microwave FET devices modeling
Authors: Long, Y.
Guo, Y.-X. 
Zhong, Z. 
Keywords: 3-D table
High-order sources
inconsistency between RF and dc current
integration path (IP) independence
table-based model
Issue Date: 2012
Source: Long, Y., Guo, Y.-X., Zhong, Z. (2012). A 3-D table-based method for non-quasi-static microwave FET devices modeling. IEEE Transactions on Microwave Theory and Techniques 60 (10) : 3088-3095. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2012.2211611
Abstract: A highly accurate method of building a large-signal modeling approach considering dispersive effect of field-effect transistors is presented in this paper. The non-quasi-static effect of the transistor is described through high-order constitutive nonlinear current sources and charge sources. The extraction and building of these sources are executed by polynomial regression, which is fast and determined by unique values. The sources are built by 3-D tables, where the added dimension is a variable integration path used to account for the dispersion effect. The performance up to the millimeter-wave frequency of the model is satisfied. The validity of the proposed technology-independent approach has been verified by both GaAs and GaN devices. © 1963-2012 IEEE.
Source Title: IEEE Transactions on Microwave Theory and Techniques
URI: http://scholarbank.nus.edu.sg/handle/10635/53889
ISSN: 00189480
DOI: 10.1109/TMTT.2012.2211611
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