Low dielectric constant a-SiOC:H films as copper diffusion barrier

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1530722

Title:	Low dielectric constant a-SiOC:H films as copper diffusion barrier
Authors:	Koh, Y.W. Loh, K.P. Rong, L. Wee, A.T.S. Huang, L. Sudijono, J.
Issue Date:	15-Jan-2003
Citation:	Koh, Y.W., Loh, K.P., Rong, L., Wee, A.T.S., Huang, L., Sudijono, J. (2003-01-15). Low dielectric constant a-SiOC:H films as copper diffusion barrier. Journal of Applied Physics 93 (2) : 1241-1245. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1530722
Abstract:	The development of a low-K dielectric barrier based on silicon oxycarbide for copper damascence processes was discussed. The optimal process conditions allowing the deposition of silicon oxycarbide films with a dielectric constant of 3.74 and copper diffusion depth of 290 Å were identified. The composition of the films was studied and dielectric constant and dielectric breakdown of the films was also evaluated.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/53016
ISSN:	00218979
DOI:	10.1063/1.1530722
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check