Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1530722
Title: Low dielectric constant a-SiOC:H films as copper diffusion barrier
Authors: Koh, Y.W.
Loh, K.P. 
Rong, L. 
Wee, A.T.S. 
Huang, L.
Sudijono, J.
Issue Date: 15-Jan-2003
Source: Koh, Y.W., Loh, K.P., Rong, L., Wee, A.T.S., Huang, L., Sudijono, J. (2003-01-15). Low dielectric constant a-SiOC:H films as copper diffusion barrier. Journal of Applied Physics 93 (2) : 1241-1245. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1530722
Abstract: The development of a low-K dielectric barrier based on silicon oxycarbide for copper damascence processes was discussed. The optimal process conditions allowing the deposition of silicon oxycarbide films with a dielectric constant of 3.74 and copper diffusion depth of 290 Å were identified. The composition of the films was studied and dielectric constant and dielectric breakdown of the films was also evaluated.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/53016
ISSN: 00218979
DOI: 10.1063/1.1530722
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