Please use this identifier to cite or link to this item:
|Title:||Effect of process related and haze defects on 193 nm immersion lithography|
|Authors:||Tay, C.J. |
|Citation:||Tay, C.J., Quan, C., Ling, M.L., Lin, Q., Chua, G.S. (2010). Effect of process related and haze defects on 193 nm immersion lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 28 (1) : 45-51. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3271332|
|Abstract:||In this article, the effect of a defective mask on 193 nm immersion lithography with a 6% attenuated phase-shifting mask is investigated. Two types of defect are studied: process related defect and haze defect. Several factors including defect location, size, transmission, phase, and illumination settings are considered. Exposure using a standard 45 nm SRAM cell shows that the printability of a defect on a mask depends on the pattern density and defect size and it is also shown that the impact of a defect on a polysilicon gate layer is worse than that on an active layer. A defect that is adjacent to a main feature causes more critical dimension (CD) variation than that between two main features. Simulation using a through pitch line and space pattern is used to investigate the impact of a haze defect. A change in transmission results in an increase in the CD variation in the main feature but not the critical defect size. However, a larger phase difference between the defect and background would increase the CD variation and reduces the critical defect size. Illumination with a low partial coherence setting increases the CD variation caused by defects. © 2010 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 13, 2018
WEB OF SCIENCETM
checked on Jun 6, 2018
checked on May 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.