Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555373
Title: Two-band model of spin-polarized tunneling incorporating discrete charging energy
Authors: Wang, X.
Jalil, M.B.A. 
Issue Date: 15-May-2003
Citation: Wang, X., Jalil, M.B.A. (2003-05-15). Two-band model of spin-polarized tunneling incorporating discrete charging energy. Journal of Applied Physics 93 (10 3) : 8056-8058. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555373
Abstract: The discrete charging energy was incorporated into the Hamiltonian model to explain tunneling transport across a double-junction system. Quantum mechanical transfer matrix method was considered to evaluate the transmission coefficients and current across the double barrier. A bias-dependent tunneling magnetoresistance with a peak value exceeding 35% was obtained.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/51269
ISSN: 00218979
DOI: 10.1063/1.1555373
Appears in Collections:Staff Publications

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