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|Title:||Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition|
Optical and structural properties
|Citation:||Feng, Z.C., Zhang, X., Chua, S.J., Yang, T.R., Deng, J.C., Xu, G. (2002-04-22). Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. Thin Solid Films 409 (1) : 15-22. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(02)00096-2|
|Abstract:||GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design. © 2002 Elsevier Science B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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