Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(02)00096-2
Title: Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
Authors: Feng, Z.C.
Zhang, X.
Chua, S.J. 
Yang, T.R.
Deng, J.C. 
Xu, G.
Keywords: GaN
MOCVD
Optical and structural properties
Issue Date: 22-Apr-2002
Source: Feng, Z.C., Zhang, X., Chua, S.J., Yang, T.R., Deng, J.C., Xu, G. (2002-04-22). Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. Thin Solid Films 409 (1) : 15-22. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(02)00096-2
Abstract: GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/51226
ISSN: 00406090
DOI: 10.1016/S0040-6090(02)00096-2
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

19
checked on Dec 5, 2017

WEB OF SCIENCETM
Citations

20
checked on Nov 15, 2017

Page view(s)

43
checked on Dec 9, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.