Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2235855
Title: Ultrafast-laser-induced parallel phase-change nanolithography
Authors: Lin, Y.
Hong, M.H.
Chong, T.C.
Lim, C.S. 
Chen, G.X. 
Tan, L.S. 
Wang, Z.B.
Shi, L.P.
Issue Date: 2006
Source: Lin, Y., Hong, M.H., Chong, T.C., Lim, C.S., Chen, G.X., Tan, L.S., Wang, Z.B., Shi, L.P. (2006). Ultrafast-laser-induced parallel phase-change nanolithography. Applied Physics Letters 89 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2235855
Abstract: A phase-change nanolithography technique is developed to fabricate up to millions of two-/ three-dimensional nanostructures (~50 nm) over a large area at a high speed by combining femtosecond laser, microlens array, and wet etching process. Near-field scanning optical microscopy, electrical force microscopy, and atomic force microscopy were used to characterize optical and electrical properties of crystalline and amorphous states, respectively. Different reactions of both amorphous and crystalline areas in phase-change film to alkaline solution are demonstrated. Multiphoton absorption and ultrashort pulse contribute to nanostructure generation. This method opens up a route for nanodevice fabrication with phase-change material. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/51064
ISSN: 00036951
DOI: 10.1063/1.2235855
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