Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2885019
Title: Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirror
Authors: Lin, F. 
Xiang, N. 
Wang, X.C.
Arokiaraj, J.
Liu, W.
Chua, S.J. 
Issue Date: 2008
Source: Lin, F.,Xiang, N.,Wang, X.C.,Arokiaraj, J.,Liu, W.,Chua, S.J. (2008). Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirror. Journal of the Electrochemical Society 155 (5) : H307-H313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2885019
Abstract: Simulations and experiments were carried out to suppress the interference-induced reflectivity fluctuations in a nonmonolithically grown broad-band GaN-based semiconductor saturable absorber mirror (SESAM). Laser lift-off of the sapphire substrate, inductively coupled plasma etching of the GaN buffer, and plasma enhanced chemical vapor deposition of the antireflective coating were conducted according to the simulated optimization processes. The interference-induced reflectivity fluctuations were effectively reduced. Characterizations by atomic force microscopy, X-ray diffraction, scanning electron microscopy, and photoluminescence further indicated that the SESAM after the optimization processes exhibited a good surface morphology, crystal quality, and emission property. © 2008 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/51053
ISSN: 00134651
DOI: 10.1149/1.2885019
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 13, 2017

Page view(s)

29
checked on Dec 8, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.