Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.106.167201
Title: Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers
Authors: Yang, H. 
Yang, S.-H.
Qi, D.-C. 
Rusydi, A. 
Kawai, H.
Saeys, M. 
Leo, T.
Smith, D.J.
Parkin, S.S.P.
Issue Date: 19-Apr-2011
Source: Yang, H., Yang, S.-H., Qi, D.-C., Rusydi, A., Kawai, H., Saeys, M., Leo, T., Smith, D.J., Parkin, S.S.P. (2011-04-19). Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers. Physical Review Letters 106 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.106.167201
Abstract: The influence of the insertion of an ultrathin NiO layer between the MgO barrier and the ferromagnetic electrodes in magnetic tunnel junctions has been investigated from measurements of the tunneling magnetoresistance and via x-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of up to -16% at 2.8K. We attribute this effect to the formation of noncollinear spin structures at the interface of the NiO layer as inferred from XMCD measurements. The magnetic moments of the interface Ni atoms tilt from their easy axis due to exchange coupling with the neighboring ferromagnetic electrode, and the tilting angle decreases with increasing NiO thickness. The experimental observations are further supported by noncollinear spin density functional calculations. © 2011 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50993
ISSN: 00319007
DOI: 10.1103/PhysRevLett.106.167201
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