Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1569033

Title:	Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient
Authors:	Chen, X.Y. Lu, Y.F. Wu, Y.H. Cho, B.J. Liu, M.H. Dai, D.Y. Song, W.D.
Issue Date:	15-May-2003
Citation:	Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Liu, M.H., Dai, D.Y., Song, W.D. (2003-05-15). Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. Journal of Applied Physics 93 (10 1) : 6311-6319. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1569033
Abstract:	The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/50975
ISSN:	00218979
DOI:	10.1063/1.1569033
Appears in Collections:	Staff Publications

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