Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.100.136101
Title: Crystalline amorphous semiconductor superlattice
Authors: Chong, T.C. 
Shi, L.P.
Wei, X.Q.
Zhao, R.
Lee, H.K.
Yang, P. 
Du, A.Y.
Issue Date: 31-Mar-2008
Source: Chong, T.C., Shi, L.P., Wei, X.Q., Zhao, R., Lee, H.K., Yang, P., Du, A.Y. (2008-03-31). Crystalline amorphous semiconductor superlattice. Physical Review Letters 100 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.100.136101
Abstract: A new class of superlattice, crystalline amorphous superlattice (CASL), by alternatively depositing two semiconductor materials, is proposed. CASL displays three states depending on the component materials' phase: both polycrystalline phases, both amorphous phases, and one polycrystalline phase while another amorphous phase. Using materials capable of reversible phase transition, CASL can demonstrate reversibility among three states. GeTe/Sb2Te3 CASL has been synthesized and proved by x-ray reflectometry and TEM results. The reversible transition among three states induced by electrical and laser pulse was observed. The changes in the optical absorption edge, electrical resistivity, thermal conductivity, and crystallization temperature as a function of layer thickness are interpreted as quantum or nanoeffects. The unique properties of CASL enable the design of materials with specific properties. © 2008 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50886
ISSN: 00319007
DOI: 10.1103/PhysRevLett.100.136101
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