Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.918254

Title:	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
Authors:	Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z.
Issue Date:	May-2001
Citation:	Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z. (2001-05). Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide. IEEE Transactions on Electron Devices 48 (5) : 1010-1013. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918254
Abstract:	The quasi-breakdown (QB) mechanism of thin gate oxide was investigated through observation of defects generation during stress. It has been found that the amount of interface traps reaches to the same critical value at the onset point of QB regardless of stress conditions, implying that QB in thin oxide is triggered by a critical amount of interface traps.
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/50559
ISSN:	00189383
DOI:	10.1109/16.918254
Appears in Collections:	Staff Publications

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