Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/49131
Title: A detailed study of anodization current in ion irradiated silicon
Authors: DANG ZHIYA
Keywords: Silicon, Porous silicon and Glass, Nanostructures, Anodization current, Charged particle induced defects, Photonic Crystals,
Issue Date: 2-Aug-2013
Citation: DANG ZHIYA (2013-08-02). A detailed study of anodization current in ion irradiated silicon. ScholarBank@NUS Repository.
Abstract: Ion beam irradiation of p-type silicon combined with subsequent electrochemical anodization has been used for silicon micromachining. A detailed study on the change of electrical properties in p-type Si caused by ion irradiation, as well as its effect on current flow, is carried out. A previously ignored but important current component, a diffusion current is discovered. This discovery not only lays a foundation for effective controlling of silicon micromachining, but also opens a new way for patterning porous silicon, and glass, and their applications in mid-infrared photonic crystals. Other factors including amorphization, time evolution, and interface effects are also discussed.
URI: http://scholarbank.nus.edu.sg/handle/10635/49131
Appears in Collections:Ph.D Theses (Open)

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