A detailed study of anodization current in ion irradiated silicon

Abstract

Ion beam irradiation of p-type silicon combined with subsequent electrochemical anodization has been used for silicon micromachining. A detailed study on the change of electrical properties in p-type Si caused by ion irradiation, as well as its effect on current flow, is carried out. A previously ignored but important current component, a diffusion current is discovered. This discovery not only lays a foundation for effective controlling of silicon micromachining, but also opens a new way for patterning porous silicon, and glass, and their applications in mid-infrared photonic crystals. Other factors including amorphization, time evolution, and interface effects are also discussed.