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|Title:||A detailed study of anodization current in ion irradiated silicon||Authors:||DANG ZHIYA||Keywords:||Silicon, Porous silicon and Glass, Nanostructures, Anodization current, Charged particle induced defects, Photonic Crystals,||Issue Date:||2-Aug-2013||Citation:||DANG ZHIYA (2013-08-02). A detailed study of anodization current in ion irradiated silicon. ScholarBank@NUS Repository.||Abstract:||Ion beam irradiation of p-type silicon combined with subsequent electrochemical anodization has been used for silicon micromachining. A detailed study on the change of electrical properties in p-type Si caused by ion irradiation, as well as its effect on current flow, is carried out. A previously ignored but important current component, a diffusion current is discovered. This discovery not only lays a foundation for effective controlling of silicon micromachining, but also opens a new way for patterning porous silicon, and glass, and their applications in mid-infrared photonic crystals. Other factors including amorphization, time evolution, and interface effects are also discussed.||URI:||http://scholarbank.nus.edu.sg/handle/10635/49131|
|Appears in Collections:||Ph.D Theses (Open)|
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