Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/47404
Title: Semiconductor Nanowires for Thermoelectric Applications
Authors: LI YIDA
Keywords: silicon, silicon-germanium, nanowires, thermoelectric device, CMOS, energy
Issue Date: 2-Jul-2013
Source: LI YIDA (2013-07-02). Semiconductor Nanowires for Thermoelectric Applications. ScholarBank@NUS Repository.
Abstract: Silicon/silicon-germanium (Si/SiGe) based nanowires (NWs) hold potential for low-cost and efficient thermoelectric device (TED). For the first time, in this work the design, fabrication, and characterization of a complete Si/SiGe NW-based TED are reported. Using finite element analysis, the impact of key material parameters in the performance was elucidated for practical applications, followed by a design guideline for a complete SiNW-based TED. Using complementary-metal-oxide-semiconductor process which is prevalent in the semiconductor industry, we successfully integrated Si/SiGe NWs into a complete TED. With various process optimizations, our SiNW-based TED achieved a power output density (17kW/m3) comparable to a bismuth/antimony-based TED (18.1kW/m3). The formation of good ohmic contacts to the NW is a key to device performance. For SiGe NWs, attempts at silicidation gave rise to voids. The growth mechanism of nickel-germanosilicide was investigated; it was then discovered that void formation can be effectively suppressed with compressive stress applied at the boundary.
URI: http://scholarbank.nus.edu.sg/handle/10635/47404
Appears in Collections:Ph.D Theses (Open)

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