Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/43383
Title: RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS
Authors: DU YUANMIN
Keywords: resistive switching, TiO2, RRAM, switching mechanism, charge injection and release, the integrated model
Issue Date: 15-Feb-2013
Source: DU YUANMIN (2013-02-15). RESISTIVE SWITCHING IN TIO2 FOR MEMORY APPLICATIONS. ScholarBank@NUS Repository.
Abstract: Resistive switching refers to the electrically stimulated change of resistance under the action of an electrical field or current. Among many resistive switching materials, TiO2 has drawn widespread attention. As the system is complex, there are many experimental and theoretical challenges in exploring the underlying mechanisms. It has been proposed that the resistance switching mechanisms can be categorized into the filamentary type and the interfacial type. Both types of mechanisms have been reported in different material systems. In this dissertation, we propose an integrated model, and perform supporting experimental and theoretical studies. Multiple filamentary characteristics are also investigated. We report the observation of symmetrical negative differential resistance (NDR) characteristic with high repeatability in a switching device. Based on first-principles modeling and experimental measurements, we propose a new understanding of the Simmons and Verderber (SV) mechanism for charge storage, incorporating oxygen molecular ions into the model.
URI: http://scholarbank.nus.edu.sg/handle/10635/43383
Appears in Collections:Ph.D Theses (Open)

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