Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevA.85.025806
Title: Ultrahigh-contrast-ratio silicon Fano diode
Authors: Ding, W. 
Luk'Yanchuk, B.
Qiu, C.-W. 
Issue Date: 2012
Citation: Ding, W., Luk'Yanchuk, B., Qiu, C.-W. (2012). Ultrahigh-contrast-ratio silicon Fano diode. Physical Review A - Atomic, Molecular, and Optical Physics 85 (2). ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevA.85.025806
Abstract: We report a distinguished mechanism of using two interaction-free (uncoupled) cavities to realize an all-optical silicon diode with an extremely high contrast ratio. In contrast to existing examples of all-optical diodes, our unidirectional transmission results from mimicking Fano resonance in a compact and finite silicon waveguide. A Fano spectrum with an arbitrary asymmetric factor, resonant center, and linewidth is explicitly designed with two symmetric resonances, which can be separately realized and tuned in an insightful manner by two cascaded uncoupled cavities. The field localizations are inherently asymmetric. We show that if these double asymmetries (Fano spectrum and field localization) are integrated and controlled, an ultrahigh-contrast-ratio silicon Fano diode is accomplished. This finding provides a promising avenue for achieving an extremely compact optical switch and incorporating Fano resonance in silicon photonics. © 2012 American Physical Society.
Source Title: Physical Review A - Atomic, Molecular, and Optical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/43010
ISSN: 10502947
DOI: 10.1103/PhysRevA.85.025806
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