Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/38756
Title: Interfaces at metals/oxides: Characterizations and Atomistic Modeling
Authors: WONG TEN IT
Keywords: ZnO/CeO2/Si interface, HfO2/NiSi2 interface, XRD & AFM & TEM & SEM, ToFSIMS & photoluminiscence, first principles calculations & DFT, PLD
Issue Date: 10-Jan-2013
Source: WONG TEN IT (2013-01-10). Interfaces at metals/oxides: Characterizations and Atomistic Modeling. ScholarBank@NUS Repository.
Abstract: High-k epitaxial CeO2 thin film has been grown on Si(111) by pulsed laser deposition. Charaterisation works were carried out to study the formation mechanism of twin domain CeO2 growth. ZnO(002) epitaxial films have been successfully grown on Si(111) with CeO2 as a buffer layer by pulsed laser deposition. Charaterisation works were carried out to study the interfaces between the ZnO/CeO2. The interface energetics and the Schottky-barrier heights (SBHs) of NiSi2/HfO2 gate stacks are investigated within the framework of first-principles calculations. It was found that the SBHs are interface structure dependent and vary with abrupt interfacial bonds.
URI: http://scholarbank.nus.edu.sg/handle/10635/38756
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