Electronic transport of graphene devices

Abstract

This thesis represents mainly investigations of electronic transport of graphene devices. First of all, the surface property of graphene has been studied in order to make better contacts between graphene and metal. Electrical properties of graphene are investigated. Reproducible current hysteresis is observed when high voltage bias is swept in the graphene channel. Capacitance ? gate voltage measurements on top gated bilayer graphene indicate that the origin of hysteresis in the channel resistance is due to charge traps present at the graphene/Al2O3 interface with a charging and discharging time constant of ~100 ?s. The tunneling characteristic of graphene from the two-terminal devices after the breakdown is studied. Stochastic transitions between an ohmic like state and an insulator like state in graphene devices are studied.