Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/34933
Title: Thermally stable fully silicided Hf silicide metal gate electrode
Authors: PARK, CHANG SEO 
CHO, BYUNG JIN 
Issue Date: 7-Dec-2006
Source: PARK, CHANG SEO,CHO, BYUNG JIN (2006-12-07). Thermally stable fully silicided Hf silicide metal gate electrode. ScholarBank@NUS Repository.
Abstract: A method is described for forming an n-MOSFET with a fully silicided Hf suicide gate electrode that has a work function essentially the same as n.sup.+ polysilicon. An in-situ phosphorous doped polysilicon film is deposited on a gate dielectric layer on a CMOS substrate and annealed at 900.degree. C. After native oxides are removed, a Hf layer is sputter deposited on the doped polysilicon. A W capping layer is formed on the Hf layer to prevent oxidation during a subsequent silicidation. Following the silicidation, W and unreacted Hf are removed. A permanent TaN capping layer is deposited on the HfSi layer to suppress oxidation and reduce sheet resistance. There is no meaningful change in EOT or flat band voltage even after a RTA at 950.degree. C. for 30 seconds. The resulting Hf silicide has a composition ratio of 0.9 according to RBS and has a work function of about 4.23 eV.
URI: http://scholarbank.nus.edu.sg/handle/10635/34933
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
US20060273410A1.pdf653.81 kBAdobe PDF

OPEN

PublishedView/Download

Page view(s)

101
checked on Dec 8, 2017

Download(s)

108
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.