Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/28201
Title: Design and fabrication of superjunction power MOSFET devices
Authors: CHEN YU
Keywords: power MOSFET, superjunction, partial SOI, LDMOS, oxide-bypassed, power integrated circuits
Issue Date: 19-May-2009
Source: CHEN YU (2009-05-19). Design and fabrication of superjunction power MOSFET devices. ScholarBank@NUS Repository.
Abstract: The originally proposed superjunction power MOSFET structures are highly recognized for their higher voltage blocking capability and lower specific on-state resistance. However, their performance is greatly handicapped by the limitation of fabrication process technology. Recently developed structures of Polysilicon Flanked Superjunction (PF-SJ) and Oxide-bypassed Superjunction (OB-SJ) MOSFETs were designed to overcome the conventional superjunction device fabrication limitation. The follow-up development on extending the scope of these recently reported device structures to the lateral superjunction structures, suitable for the superjunction power integrated circuits, is investigated in this work. Detailed descriptions on the progressive development and the technical advancement of several superjunction MOSFET structures are presented with both simulation and experimental results. Complete theories and closed-form derivations on SJ, OB superjunction structures are also studied to gain a thorough understanding of superjunction theory and establish a theoretical framework for the existing superjunction devices. Novel device structure is also proposed.
URI: http://scholarbank.nus.edu.sg/handle/10635/28201
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
PhD thesis_ChenYu.pdf5.55 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

363
checked on Dec 11, 2017

Download(s)

1,840
checked on Dec 11, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.