Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/28127
Title: Controlled facet growth of GaN and the overgrowth with ZnO
Authors: ZHOU HAILONG
Keywords: Facet control epitaxial lateral overgrowth (FACELO); GaN; ZnO; quantum well; semi-polar surface; optical electronic device
Issue Date: 4-Dec-2007
Source: ZHOU HAILONG (2007-12-04). Controlled facet growth of GaN and the overgrowth with ZnO. ScholarBank@NUS Repository.
Abstract: The III-nitrides semiconductors form an interesting class of wide bandgap materials, which are likely to be the basis of a strong development of a novel family of semiconductor devices. The so-called Facet Control Epitaxial Lateral Overgrowth (FACELO) technology was developed and was able to successfully reduce the dislocation density of nitride materials. Even more, FACELO GaN could achieve (1-101) and (11-22) facets, and quantum well structures can grown on these semi-polar facets with a reduced piezoelectric field. In this study, three activities were carried out: firstly, the FACELO GaN growth and some modeling simulation work were introduced; secondly, we investigated the InGaN multi-quantum wells (MQWs) and AlGaN MQWs grown on the FACELO GaN templates; finally, high quality ZnO grown on FACELO GaN templates was achieved. All these findings strongly suggest that achievement of better optical property due to the improvement of the crystal quality and reduction of the polar filed.
URI: http://scholarbank.nus.edu.sg/handle/10635/28127
Appears in Collections:Ph.D Theses (Open)

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