High-K dielectric MIM capacitors for Silicon RF and analog applications

Abstract

In this work, we develop high performance MIM capacitors for both RF and analog circuit applications using HfO2 based high-I? dielectrics. Various fabrication methods such as PLD, PVD, and ALD have been employed to prepare high-I? dielectrics, and different dielectric structures like composite and nanolaminates have also been explored. Extensive electrical characterization in terms of RF, DC, and reliability justify the usefulness of HfO2 based dielectrics, and mechanisms with regard to the electronic conduction, oxide degradation etc., have been discussed and analyzed. A good understanding of process-structure-property correlation is thus been achieved for high-I? dielectrics processing in BEOL process. Finally, a free carrier injection model has been proposed to quantitatively explain the a??thickness effectsa?? for the first time, and further help to understand the frequency and electrical stress dependence of voltage coefficients.