Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27635
Title: Fabrication of ultra-shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing
Authors: CHONG YUNG FU
Keywords: crystal damage, gate oxide, laser thermal processing, poly-depletion, step-like profile, ultra-shallow junctions
Issue Date: 11-Nov-2003
Source: CHONG YUNG FU (2003-11-11). Fabrication of ultra-shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing. ScholarBank@NUS Repository.
Abstract: In this project, a novel technique known as laser thermal processing (LTP) was employed to fabricate ultra-shallow p+/n junctions and advanced polycrystalline silicon (poly-Si) gate stacks for ultra-large scale integration technologies. The results show that LTP can form highly activated ultra-shallow p+/n junctions with step-like dopant profiles. In addition, LTP can virtually anneal all the crystal damage created by ion implantation. The data obtained from electrical measurements indicate that LTP, when combined with a post-LTP anneal, results in a substantial increase in the carrier concentration at the critical poly-Si gate/gate oxide interface. Thus, the poly-depletion thickness is readily reduced. Time-dependent dielectric breakdown studies show an improvement in gate oxide reliability after LTP at high fluences.
URI: http://scholarbank.nus.edu.sg/handle/10635/27635
Appears in Collections:Ph.D Theses (Open)

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