Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/21/5/017
Title: Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
Authors: Yeo, C.C. 
Cho, B.J. 
Lee, M.H.
Liu, C.W.
Choi, K.J.
Lee, T.W.
Issue Date: 2006
Citation: Yeo, C.C., Cho, B.J., Lee, M.H., Liu, C.W., Choi, K.J., Lee, T.W. (2006). Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric. Semiconductor Science and Technology 21 (5) : 665-669. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/21/5/017
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/25762
ISSN: 02681242
13616641
DOI: 10.1088/0268-1242/21/5/017
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