Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16366
Title: Bottom-up 1-D nanowires and their applications
Authors: SUN ZHIQIANG
Keywords: Nanowire, NiSi nanowire, SiGe nanowire, Synthesis, Activation energy, Nanowire temperature
Issue Date: 26-Nov-2009
Source: SUN ZHIQIANG (2009-11-26). Bottom-up 1-D nanowires and their applications. ScholarBank@NUS Repository.
Abstract: This thesis focuses on the study of bottom-up synthesis of single-crystalline NiSi nanowires and SiGe nanowires via a bottom-up approach using a chemical vapor deposition (CVD) process. First, the growth mechanism of NiSi nanowire was systematically investigated and a detailed growth model was proposed based on experimental results, and the synthesis temperature was found to control the diameters of NiSi nanowires with an activation energy of ~1.72 eV. Secondly, long and uniform SiGe nanowires with a high concentration of Ge and various diameters were obtained using Au-catalyzed growth. It was found that the composition varies along the nanowire stem, also depends on the diameter of the nanowire.
URI: http://scholarbank.nus.edu.sg/handle/10635/16366
Appears in Collections:Master's Theses (Open)

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