Synthesis and characterization of gallium nitride nanowires by pulsed laser ablation

Abstract

Gallium nitride nanowire is one of the most promising elemental building blocks in nanotechnological applications as potentially ideal building blocks for nanoscale electronics and optoelectronics. With a large band gap and structural confinement, gallium nitride nanowires have great potential for use as nanosized ultra-violet or blue emitters, detectors, high-speed field-effect transistors, and high temperature microelectronic devices.Driven by these promising applications of gallium nitride nanowires, this project was conducted to do a systematic material study on the growth of gallium nitride nanowires by pulsed laser ablation method in nitrogen ambient. We made effort to grow better quality GaN nanowires by pulsed laser ablation and demonstrate the field emission properties of these GaN nanowires.