Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15970
Title: Synthesis and characterization of gallium nitride nanowires by pulsed laser ablation
Authors: NG KEH TING, DORIS
Keywords: Gallium nitride, nanowire, pulsed laser ablation, nitrogen ambient, material characterization, field emission
Issue Date: 1-Nov-2008
Source: NG KEH TING, DORIS (2008-11-01). Synthesis and characterization of gallium nitride nanowires by pulsed laser ablation. ScholarBank@NUS Repository.
Abstract: Gallium nitride nanowire is one of the most promising elemental building blocks in nanotechnological applications as potentially ideal building blocks for nanoscale electronics and optoelectronics. With a large band gap and structural confinement, gallium nitride nanowires have great potential for use as nanosized ultra-violet or blue emitters, detectors, high-speed field-effect transistors, and high temperature microelectronic devices.Driven by these promising applications of gallium nitride nanowires, this project was conducted to do a systematic material study on the growth of gallium nitride nanowires by pulsed laser ablation method in nitrogen ambient. We made effort to grow better quality GaN nanowires by pulsed laser ablation and demonstrate the field emission properties of these GaN nanowires.
URI: http://scholarbank.nus.edu.sg/handle/10635/15970
Appears in Collections:Ph.D Theses (Open)

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1Cover.pdf11.07 kBAdobe PDF

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2Acknowledgement.pdf12.75 kBAdobe PDF

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3Contents_3.pdf26.94 kBAdobe PDF

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4Summary.pdf21.41 kBAdobe PDF

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5Nomenclature.pdf34.11 kBAdobe PDF

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6List of Figures-Tables.pdf33.07 kBAdobe PDF

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7Chapter 1Introduction.pdf82.63 kBAdobe PDF

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8Chapter 2aExperimental Procedure.pdf93.75 kBAdobe PDF

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9Chapter 3aGaN.pdf2.55 MBAdobe PDF

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10Chapter 4Orientating.pdf2.98 MBAdobe PDF

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11Chapter 5Demo.pdf1.93 MBAdobe PDF

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12Chapter 6Other.pdf668.39 kBAdobe PDF

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13Chapter 7Conclusion.pdf39.06 kBAdobe PDF

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14List of Publications.pdf29.37 kBAdobe PDF

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15AppendixA.pdf185.23 kBAdobe PDF

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