Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15938
Title: Advanced source and drain contact engineering for low parasitic series resistance
Authors: KOH TIAN YI, ALVIN
Keywords: Contact Engineering
Issue Date: 15-Apr-2009
Source: KOH TIAN YI, ALVIN (2009-04-15). Advanced source and drain contact engineering for low parasitic series resistance. ScholarBank@NUS Repository.
Abstract: Complementary Metal-Oxide-Semiconductor (CMOS) scaling and the application of strain have led to the increasing dominance of parasitic source/drain (S/D) series resistance. This is expected to limit device performance in the 32 nm technology node and beyond. In this work, novel silicide processes and materials were evaluated as potential solutions to address the parasitic series resistance issue.
URI: http://scholarbank.nus.edu.sg/handle/10635/15938
Appears in Collections:Master's Theses (Open)

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