Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/15938
| Title: | Advanced source and drain contact engineering for low parasitic series resistance | Authors: | KOH TIAN YI, ALVIN | Keywords: | Contact Engineering | Issue Date: | 15-Apr-2009 | Citation: | KOH TIAN YI, ALVIN (2009-04-15). Advanced source and drain contact engineering for low parasitic series resistance. ScholarBank@NUS Repository. | Abstract: | Complementary Metal-Oxide-Semiconductor (CMOS) scaling and the application of strain have led to the increasing dominance of parasitic source/drain (S/D) series resistance. This is expected to limit device performance in the 32 nm technology node and beyond. In this work, novel silicide processes and materials were evaluated as potential solutions to address the parasitic series resistance issue. | URI: | http://scholarbank.nus.edu.sg/handle/10635/15938 |
| Appears in Collections: | Master's Theses (Open) |
Show full item record
Files in This Item:
| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| Koh Tian Yi Alvin _M.Eng Thesis 2009_.pdf | 3.81 MB | Adobe PDF | OPEN | None | View/Download |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.