Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15886
Title: Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology
Authors: LI RUI
Keywords: MOSFET; metal germanide; Schottky source/drain; high-k dielectrics; germanium; laser annealing
Issue Date: 29-Apr-2009
Source: LI RUI (2009-04-29). Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology. ScholarBank@NUS Repository.
Abstract: This PhD project attempts to explore the feasibility of integration of germanide Schottky source/drain (S/D) Ge channel MOSFET with high-k gate dielectric and metal gate for sub-tenth nm technology application. Systematic exploration of metal germanide for Ge p- and n-MOS applications have been carried out. Germanium p-MOSFET with Ni- or Pt- germanide Schottky S/D was successfully fabricated on n-Ge-substrate with HfO2/TaN gate stack. Rear earth metal Er or Yb germanide and NiGe with modified electron barrier height were studied for Ge n-MOS application. Moreover, laser annealing was implemented as an alternative germanide S/D formation technique. A germanium p-MOSFET with Pt-germanide Schottky S/D formed by laser annealing was successfully demonstrated.
URI: http://scholarbank.nus.edu.sg/handle/10635/15886
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