Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/15886
Title: | Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology | Authors: | LI RUI | Keywords: | MOSFET; metal germanide; Schottky source/drain; high-k dielectrics; germanium; laser annealing | Issue Date: | 29-Apr-2009 | Citation: | LI RUI (2009-04-29). Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology. ScholarBank@NUS Repository. | Abstract: | This PhD project attempts to explore the feasibility of integration of germanide Schottky source/drain (S/D) Ge channel MOSFET with high-k gate dielectric and metal gate for sub-tenth nm technology application. Systematic exploration of metal germanide for Ge p- and n-MOS applications have been carried out. Germanium p-MOSFET with Ni- or Pt- germanide Schottky S/D was successfully fabricated on n-Ge-substrate with HfO2/TaN gate stack. Rear earth metal Er or Yb germanide and NiGe with modified electron barrier height were studied for Ge n-MOS application. Moreover, laser annealing was implemented as an alternative germanide S/D formation technique. A germanium p-MOSFET with Pt-germanide Schottky S/D formed by laser annealing was successfully demonstrated. | URI: | http://scholarbank.nus.edu.sg/handle/10635/15886 |
Appears in Collections: | Ph.D Theses (Open) |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
Li Rui_ PhD thesis_Final_ECE_2008.pdf | 2.88 MB | Adobe PDF | OPEN | None | View/Download |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.