Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15301
Title: Formation of advanced gate stacks and their application to nano structure devices
Authors: CHEN JING HAO
Keywords: Plasma, Etch, High-K, Memory, Nanocrystals, Nanodots
Issue Date: 17-May-2006
Source: CHEN JING HAO (2006-05-17). Formation of advanced gate stacks and their application to nano structure devices. ScholarBank@NUS Repository.
Abstract: Physical and chemical mechanisms on the formation of advanced gate stacks for the future nano-scale planar CMOS and NVM devices are explored. Plasma etching and wet removal properties of Hf based high-K gate were investigated. It was found that the crystallized HfO2 phase is the main reason for the rapid decrease of the wet etch rate of Hf based high-K dielectrics after anneal. Plasma can destroy the crystalline structure, resulting in a large increase of etch rate. Plasma etch rate varied depending on the chemical components in the Hf based high-K dielectrics. Formation of Ge nanocrystals embedded in HfAlO was studied. Physical characterization shows a good thermal stability of this structure. A self-assembly technique of Al2O3 nano-dots on SiO2 has also been developed to suppress lateral migration of electrons via Frenkel-Poole tunneling.
URI: http://scholarbank.nus.edu.sg/handle/10635/15301
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