Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation

Abstract

Based on previous inverse modeling research, this project extends inverse modeling technique by including process and device simulation together with multiple transistors electrical data used as target for matching. Such methodology will allow a physical way of taking sensitive process steps such as implantation and high temperature annealing into account. By combining the electrical data like sub-threshold Id-Vg of multiple transistors for matching, the chance of getting a non-unique solution is kept to minimum. An algorithm which spread process simulation to multiple processors is developed to make the time consuming process simulation more efficient.Since the final doping profile is based on simulation of doping activation and diffusion instead of pure mathematical representation of doping profile as it was done in the past, result can be predictive in nature. A set of parameters obtained can be used for transistor produced with similar technology and process condition. This allows fast characterization of multiple transistors without the repeated use of time consuming inverse modeling exercise and provides alternative to back check the uniqueness of solution obtained.