Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15063
Title: Design and optimization of lithographic materials and processing
Authors: SOO CHOI PHENG
Keywords: photoresist, lithography, photoacid diffusion, sidewall profile, etch resistance, pattern placement accuracy
Issue Date: 1-Mar-2006
Source: SOO CHOI PHENG (2006-03-01). Design and optimization of lithographic materials and processing. ScholarBank@NUS Repository.
Abstract: Photoresist or resist is the photosensitive material used for patterning or lithographic process for the fabrication of integrated circuit (IC) devices. This project is focused on the material aspects of the chemically amplified resists and related substrates. The critical lithographic process capability is discussed in terms of pattern fidelity a?? lateral dimension and sidewall profile, etch resistance and the overlay accuracy between levels in IC fabrication. In this study, a method to determine diffusivity of photoacid, which affects lateral resolution capability of photoresist has been demonstrated. Experimental work has shown that the sidewall profile can be stabilized by modifying the substrate and increase in etch resistance can be achieved by ion implantation. Overlay accuracy can be improved through pattern placement accuracy in electron-beam writing of mask. In this research, resist formulation has been doped with some novel chromophoric polymers to generate the fiducial grids for direct referencing.
URI: http://scholarbank.nus.edu.sg/handle/10635/15063
Appears in Collections:Ph.D Theses (Open)

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1_Title Page.pdf31.22 kBAdobe PDF

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2_Table of Content.pdf188.54 kBAdobe PDF

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3_Chap1 Intro.pdf329.2 kBAdobe PDF

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4_Chap2 Scope.pdf55.23 kBAdobe PDF

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5_Chap3 Acid Diffusion.pdf627.51 kBAdobe PDF

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6_Chap4 Footing.pdf942.09 kBAdobe PDF

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7_Chap5 Pinching.pdf1.16 MBAdobe PDF

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8_Chap6 Etch Resistance.pdf775.83 kBAdobe PDF

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9_Chap7 Chromophore.pdf799.89 kBAdobe PDF

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9A_Chap8 Conclusion.pdf68.43 kBAdobe PDF

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9B_Appendix.pdf2.32 MBAdobe PDF

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