Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15051
Title: Selected topics on advanced electron devices and their circuit applications
Authors: YANG TIAN
Keywords: Fast Dynamic NBTI, SiON, Nit, Not, MIM
Issue Date: 6-Mar-2006
Source: YANG TIAN (2006-03-06). Selected topics on advanced electron devices and their circuit applications. ScholarBank@NUS Repository.
Abstract: Selected topics on advanced modern electron devices have been studied in this thesis, including both active devices and passive devices.I part I, a systematic study of Negative Bias Temperature Instability (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. Evidence has been shown that this component is due to trapping and de-trapping of hole traps Not in SiON. A model describing the phenomenon has been developed and the simulation results are in excellent agreement with all the experiments. The impact of fast DNBTI on device lifetime and circuit applications has been re-evaluated in the light of this new finding.In part II, researches have been done on proton implanted high quality inductor as well as high-I? MIM capacitor, showing promising characteristics for future ULSI application.
URI: http://scholarbank.nus.edu.sg/handle/10635/15051
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Thesis_YT_Feb06.pdf2.46 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

239
checked on Dec 11, 2017

Download(s)

219
checked on Dec 11, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.