3D simulation and fabrication of multiple-gate device

Abstract

3D simulation studies show that the control of the short channel effects and subthreshold degradation improves with narrower fin and smaller film thickness and that accounts for the motivation of researchers to explore into the possibility of narrower fins for better transistor performance. The concept of periodically bent Si-SiO2 interface is applied in MOS design to explain and study the corner effects in a n-gate structure (similar to tri-gate device). It was found through simulation that rounding the corners of the fin prevent the a??softeninga?? transition and the suthreshold hump as compared to fins with sharp corners. This is because the concentration of the electric field is reduced at regions which are rounded. The fabrication flow of the novel n-gate and GAA devices are also illustrated clearly using different XSEM and schematic diagrams.