Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14982
Title: 3D simulation and fabrication of multiple-gate device
Authors: TEE KIAN MENG
Keywords: SOI, corner rounding, multiple gate devices, FINFET, gate all around devices, pseudo 3D simulation
Issue Date: 13-Sep-2005
Source: TEE KIAN MENG (2005-09-13). 3D simulation and fabrication of multiple-gate device. ScholarBank@NUS Repository.
Abstract: 3D simulation studies show that the control of the short channel effects and subthreshold degradation improves with narrower fin and smaller film thickness and that accounts for the motivation of researchers to explore into the possibility of narrower fins for better transistor performance. The concept of periodically bent Si-SiO2 interface is applied in MOS design to explain and study the corner effects in a n-gate structure (similar to tri-gate device). It was found through simulation that rounding the corners of the fin prevent the a??softeninga?? transition and the suthreshold hump as compared to fins with sharp corners. This is because the concentration of the electric field is reduced at regions which are rounded. The fabrication flow of the novel n-gate and GAA devices are also illustrated clearly using different XSEM and schematic diagrams.
URI: http://scholarbank.nus.edu.sg/handle/10635/14982
Appears in Collections:Master's Theses (Open)

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Thesis format.pdf137.93 kBAdobe PDF

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Chapter1_Introduction_31 Aug.pdf22.14 kBAdobe PDF

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Chapter2_Literature_31 Aug.pdf448 kBAdobe PDF

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Chapter3_software_31 Aug.pdf90.27 kBAdobe PDF

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Chapter4_simulationresults_updated_31 Aug.pdf105.2 kBAdobe PDF

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Chapter5_Process_flow_31 Aug.pdf953.04 kBAdobe PDF

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Chapter6_Devicedata_corrected_31 Aug.pdf86.85 kBAdobe PDF

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Chapter7_Conclusion and Recomendation_31 Aug.pdf11.9 kBAdobe PDF

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references.pdf13.88 kBAdobe PDF

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Appendix.pdf18.01 kBAdobe PDF

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Models used in Simulation.pdf55.98 kBAdobe PDF

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List of Contributions.pdf7.1 kBAdobe PDF

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